REGISTER

FR
Search
×
FR

Placeholder headline

This is just a placeholder headline

API SPEC 14L: Lock Mandrels and Landing Nipples : Reaffirmed

$

273

BUY NOW

Placeholder headline

This is just a placeholder headline

API SPEC 20F: Corrosion Resistant Bolting for Use in the Petroleum and Natural Gas Industries : Reaffirmed

$

169

BUY NOW

Placeholder headline

This is just a placeholder headline

API TR 5NCL Nickel Content Limits for API 5CT Sour Service Products

$

149

BUY NOW

Placeholder headline

This is just a placeholder headline

API SPEC 19ICD: Inflow Control Devices : Reaffirmed

$

189

BUY NOW

Placeholder headline

This is just a placeholder headline

API MPMS CH 23.2: Reconciliation of Liquid Tank Car(s) Quantities : Reaffirmed

$

218

BUY NOW

Placeholder headline

This is just a placeholder headline

API SPEC 16A: Specification for Drill-through Equipment

$

322

BUY NOW

Placeholder headline

This is just a placeholder headline

API RP 13B-2: Field Testing Oil-based Drilling Fluids wA1

$

388

BUY NOW

ISO 12406:2010

ISO 12406:2010 Surface chemical analysis – Secondary-ion mass spectrometry – Method for depth profiling of arsenic in silicon

CDN $173.00

Description

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

Edition

1

Published Date

2010-11-08

Status

PUBLISHED

Pages

13

Language Detail Icon

English

Format Secure Icon

Secure PDF

Abstract

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

Previous Editions

Can’t find what you are looking for?

Please contact us at: